Method for obtaining a nanostructured layer of titanium nitride by cathode sputtering deposition - Cnam - Conservatoire national des arts et métiers Accéder directement au contenu
Brevet Année : 2023

Method for obtaining a nanostructured layer of titanium nitride by cathode sputtering deposition

Résumé

The invention relates to a method for obtaining a nanostructured layer of titanium nitride by deposition by cathode sputtering of a substrate at ambient temperature, characterised in that it comprises: - a first step of reactive cathode sputtering at ambient temperature in a vacuum chamber comprising a reactive gas, an inert gas, the substrate with a diameter of 100 mm or more, and a target cathode, under specific conditions; - a second step of wet etching of the monolayer of titanium nitride deposited during the first step, the wet etching comprising the application of a solution, in order to obtain a thin monolayer of titanium nitride, TiN, having controlled black coloration, the reactive cathode sputtering being carried out during the first step using a discharge provided by a direct current generator, the reactive gas being composed of nitrogen, with a predetermined flow rate of inert gas and of reactive gas entering the chamber, a predetermined ratio of inert gas and of reactive gas, a predetermined pressure in the chamber and a predetermined power of the direct current generator. Varying these parameters or not adhering to the ratio no longer provides the nanostructuring obtained in step 2.
Fichier non déposé

Dates et versions

hal-04581963 , version 1 (21-05-2024)

Identifiants

  • HAL Id : hal-04581963 , version 1

Citer

Lionel Rousseau, Claudia-Antonella Wilfinger, Etienne Herth. Method for obtaining a nanostructured layer of titanium nitride by cathode sputtering deposition. France, Patent n° : WO2023001992A1. 2023. ⟨hal-04581963⟩
0 Consultations
0 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More