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Journal Articles Microelectronics Reliability Year : 2022

Study of short-circuit robustness of p-GaN and cascode transistors

Abstract

Short-circuit (SC) robustness is necessary for GaN adoption in industrial applications but continued efforts are needed to make them ready for real-world use. This work presents the results of >160 destructive tests performed on commercially available 600 V and 650 V GaN HEMT transistors from four different manufacturers with different structures (p-GaN and cascode). Under a DC-bus voltage of 400 V, the robustness is strongly dispersed: the Time To Failure (TTF) varies from hundreds of nanoseconds to hundreds of microseconds. But at a lower voltage (270 V), the TTF is generally in the millisecond range.
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hal-04073989 , version 1 (19-04-2023)

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Matthieu Landel, C. Gautier, Stéphane Lefebvre. Study of short-circuit robustness of p-GaN and cascode transistors. Microelectronics Reliability, 2022, 138, pp.1-5. ⟨10.1016/j.microrel.2022.114695⟩. ⟨hal-04073989⟩
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